E211 - Siliconix

E211 n-channel JFET

n-channel JFETs -- designed for . . . N -IU • General Purpose Amplifiers o N IU Performance Curves NZF See Section 4 BENEFITS • High Gain GFS = 7000 ,umho Minimum (E211, E212) • High Input Impedance IGSS = 100 pA Maximum Ciss = 5 pF Typical ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage .............. -25 V Gate Cu rrent ..

Features

{Note 2 15 C IG Gate Current (Note 1) -1 -25 2 -10 E2l1 Max Min Typ -100 -3 -2.5 -25 15 7 -10 Max Min -IDO E212 TV. Unit M. . -IDO pA -4.5 -4 -25 20 15 -10 -6 V 40 mA pA Test Conditions VDS"'O,VGS"'-15V VDS-15V,lo-inA VDS O,IG -1JjA VOS-15V. VGS-O VOG'" lOV,to"" 1 rnA Common-Source Forward 4,000 12,000 7,000 12,000 7,000 12.000 1-;6 gfs Transconductance (Note 2) Dr------c~o-m-m-on-.s~o-u,-"-O-u-tP-u-t~--~--~--~--,5-0+---t---t--2DO~--~r--i---1 pmho y gas Conductance 200 i-- NI------,c,-,o"'m"'m"'on:-:.S,-,o-u''"''':-np.,-u'"t----___j--_t--_t----f---t---t---+--+--+--.