E204 - Siliconix

E204 n-channel JFET

n-channel JFETs designed for • • • • General Purpose Switching H Performance Curves NP See Section 4 BENEFITS • Very Low Leakage ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage (Note 1) Gate CurreRt Total Device Dissipation (25°C Free-Air Temperature) Power Derating (to +125°C) Storage Temperature Range Operating Temperature Range, Lead T.

Features

rrent (Note 2) -35 pA VOG" 20 V, 10 = 200!1A Common Source Forward 9fs Transconductance (Note 3) Common-Source Output 90S Conductance Common-Source Input Ciss Capacitance Common-Source Reverse Cr55 Transfer Capacitance 1500 2,5 5 2 llmho VOS"20V,VGS"0 pF - Equivalent Short-Circuit en Input Noise Voltage 10 nV .jHz VOS"10V,VGS=0 f = 1 kHz f" 1 MHz f" 1 kHz - NOTES: NP " e Geometry is symmetrical. Units may be operated with source and drain leads interchanged. 2, Approximately doubles for every 10u increase in T A' 3, Pulse test duration ~ 2 ms. 3-75 © 1977 SIlIConll.