E174 - Siliconix

E174 p-channel JFET

p-channel JFETs designed for • • • • Analog Switches • Choppers • Commutators ABSOLUTE MAXIMUM RATINGS (25°C) . Gate·Drain or Gate·Source Voltage (Note 1) ...... , 30V Gate Current . 50 rnA Total Device Dissipation (25°C Free-Air Temperature) . 350mW Power Derating (to +125°C) .. 3.5 mW/oC Storage T.

Features

ss otherwise noted) Characteristics E174 E175 E176 El77 Unit Min TVp M.. Min TVp M.. Min TVp M.. Min TVp M.. Test Conditions 1 IGSS - Gate Reverse Current (Note 2) 2 _s VGS(off) Gate
·Source Cutoff Voltage 5 3T _A BVGSS Gate-Source Breakdown Voltage 30 4T I -C 5 j- 6 lOSS IDloffJ rOSlon) Saturation Drain Current (Note 3) -20 Dram Cutoff Current (Note 2) Drain-Source ON Resistance 1 10 3 30 -100 -7 -1 B5 Dram-Gate OFF 7 Cdg(off) Capacitance 5.5 1- 8 Csgloff) . 1- 0 Cdglon) 9V N Csglon) Source
·Gate OFF Capacitance Drain
·Gate Plus Source
· Gate ON Capacitance 5.5 40 I.