DTS6504 - Din-Tek

DTS6504 N-Channel MOSFET

N-Channel 30 V (D-S) MOSFET DTS6504 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () 0.030 at VGS = 10 V 30 0.040 at VGS = 4.5 V ID (A)a, e 6 6 Qg (Typ.) 4.2 nC SOT-363 SC-70 (6-LEADS) D1 6D D2 5D G3 4S Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • C.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• DC/DC Converters, High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM 30 ± 20 6e 6e 5.5b, c 4.4b, c 25 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power.