DSS4160FDB - Diodes

DSS4160FDB 60V DUAL NPN LOW VCE(SAT) TRANSISTOR

Features  BVCEO > 60V  IC = 1A High Continuous Collector Current  RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage VCE(SAT) < 220mV @ 1A  PD up to 2.47W for Power-Demanding Applications  RθJA Efficient, 40% Lower than SOT26  Low Profile 0.6mm High Package for Thin Applications  Totally Lead-Free & Fully RoHS Compliant (Note.

Features

 BVCEO > 60V
 IC = 1A High Continuous Collector Current
 RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance
 Low Saturation Voltage VCE(SAT) < 220mV @ 1A
 PD up to 2.47W for Power-Demanding Applications
 RθJA Efficient, 40% Lower than SOT26
 Low Profile 0.6mm High Package for Thin Applications
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3) Application
 Load Switches
 Power Management
 Charging Circuits
 Power Switches (e.g. Motors, Fans) U-DFN2020-6 (Type B) 6 DSS4160FDB 60V DUAL NPN LOW VCE(SAT) TRANSISTOR Mechanica.