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DSK12~DSK120 S-DSK12~S-DSK120 Features ● Low profile package ● Ideal for automated placement ● Low power losses, high efficiency ● Low forward voltage drop ● High surge capability ● High temperature soldering： 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC ● AEC-Q101 qualified Mechanical Date ● Case: SOD-123FL m.
● Low profile package
● Ideal for automated placement
● Low power losses, high efficiency
● Low forward voltage drop
● High surge capability
● High temperature soldering：
260℃/10 seconds at terminals
● Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
● AEC-Q101 qualified
Mechanical Date
● Case: SOD-123FL molded plastic
● Terminals: Solder plated, solderable per
JESD22-B102D
● Polarity: Laser band denotes cathode end
SOD-123FL
Major Ratings and Characteristics
IF(AV)
1.0A
VRRM
20 V to 200 V
IFSM
25A
VF 0.50V, 0.55V, 0.70V, 0.85V，0.95V
Tj max.
125 °C
Maximum Ratings & Th.
DSK115 - MDD
DSK12 THRU DSK120 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | DSK110 |
Leiditech |
SCHOTTKY BARRIER RECTIFIER |
|
| 2 | DSK110 |
RFE |
SCHOTTKY BARRIER RECTIFIER |
|
| 3 | DSK110 |
MDD |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 4 | DSK10 |
Sanyo Semicon Device |
1.0A Power Rectifier |
|
| 5 | DSK10B |
Sanyo Semicon Device |
1.0A Power Rectifier |
|
| 6 | DSK10B |
ON Semiconductor |
1.0A Power Rectifier |
|
| 7 | DSK10C |
ON Semiconductor |
1.0A Power Rectifier |
|
| 8 | DSK10E |
Sanyo Semicon Device |
1.0A Power Rectifier |
|
| 9 | DSK10E |
ON Semiconductor |
1.0A Power Rectifier |
|
| 10 | DSK10G |
Sanyo Semicon Device |
1.0A Power Rectifier |
|
| 11 | DSK10L |
Sanyo Semicon Device |
1.0A Power Rectifier |
|
| 12 | DSK12 |
Leiditech |
SCHOTTKY BARRIER RECTIFIER |
|