DSEP 8-06A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 600 V trr = 35 ns A C VRSM V 600 VRRM V Type TO-220 AC C 600 DSEP 8-06A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 2.
A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 60 0.4...0.6 2 Applications q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 60 0.25 1.42 2.10 2.5 0.5 mA mA V V K/W K/W ns q q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSEP8-06B |
IXYS Corporation |
HiPerFRED Epitaxial Diode | |
2 | DSEP8-12A |
IXYS Corporation |
Epitaxial Diode | |
3 | DSEP12-12A |
IXYS |
High Performance Fast Recovery Diode | |
4 | DSEP12-12A |
INCHANGE |
Ultrafast Rectifier | |
5 | DSEP12-12AZ |
INCHANGE |
Ultra fast Rectifier | |
6 | DSEP12-12AZ |
IXYS |
High Performance Fast Recovery Diode | |
7 | DSEP12-12B |
IXYS |
Epitaxial Diode | |
8 | DSEP12-12BZ |
IXYS |
High Performance Fast Recovery Diode | |
9 | DSEP130-06A |
IXYS Corporation |
Epitaxial Diode | |
10 | DSEP15-06A |
IXYS |
High Performance Fast Recovery Diode | |
11 | DSEP15-06AS |
IXYS |
High Performance Fast Recovery Diode | |
12 | DSEP15-06AS |
INCHANGE |
TO-220 Ultrafast Rectifier |