DSEP15-12CR - IXYS

DSEP15-12CR Epitaxial Diode

DSEP 15-12CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) Preliminary Data VRSM V 1200 VRRM V 1200 DSEP 15-12CR Type A C IFAV = 15 A VRRM = 1200 V trr = 20 ns ISOPLUS 247TM C A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight .

Features

q TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 150 2500 20...120 6 q q q q q Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Applications q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Cha.