Fast Recovery Epitaxial Diode (FRED) DSEI 2x 121 IFAVM = 2x 123 A VRRM = 200 V trr = 35 ns VRSM V 200 VRRM V 200 Type miniBLOC, SOT-227 B E72873 DSEI 2x 121-02A Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions Maximum Ratings (per diode) 150 123 600 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s °C °.
q TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q q International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour miniBLOC, SOT-227 B TVJ = 150°C; t = 10 ms (50 Hz), sine t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSEI2x121-02A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
2 | DSEI2x121-02P |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
3 | DSEI2X101 |
IXYS Corporation |
Fast Recovery Epitaxial Diode (FRED) | |
4 | DSEI2X101-06A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
5 | DSEI2x101-06P |
IXYS |
Fast Recovery Epitaxial Diode | |
6 | DSEI2x101-12A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
7 | DSEI2x101-12P |
IXYS |
Fast Recovery Epitaxial Diode | |
8 | DSEI2x161-02P |
IXYS |
Fast Recovery Epitaxial Diode | |
9 | DSEI2x161-06P |
IXYS |
Fast Recovery Epitaxial Diode | |
10 | DSEI2x161-12P |
IXYS |
Fast Recovery Epitaxial Diode | |
11 | DSEI2X30 |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
12 | DSEI2x30-04C |
IXYS |
Fast Recovery Epitaxial Diode |