Fast Recovery Epitaxial Diode (FRED) DSEI 2x30 DSEI 2x31 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns VRSM V 600 600 VRRM V 600 600 Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Features • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft reco.
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• 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour A A A A °C °C °C W V~ V~ Nm lb.in. g
Symbol IFRMS IFAVM ① IFRM IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR
Conditions
Maximum Ratings (per diode) 70 30 375 300 -40...+150 150 -40...+150
TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine
Applications
• Antiparallel diode for high frequency switching devices
• Anti saturation d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSEI2X30 |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
2 | DSEI2x30-04C |
IXYS |
Fast Recovery Epitaxial Diode | |
3 | DSEI2x30-06C |
IXYS |
Fast Recovery Epitaxial Diode | |
4 | DSEI2x30-06P |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
5 | DSEI2x30-10B |
IXYS |
Fast Recovery Epitaxial Diode | |
6 | DSEI2x30-12B |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
7 | DSEI2x31-04C |
IXYS |
Fast Recovery Epitaxial Diode | |
8 | DSEI2x31-06C |
IXYS |
Fast Recovery Epitaxial Diode | |
9 | DSEI2x31-06P |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
10 | DSEI2x31-10B |
IXYS |
Fast Recovery Epitaxial Diode | |
11 | DSEI2x31-12B |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
12 | DSEI2x31-12P |
IXYS |
Fast Recovery Epitaxial Diode |