www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM V 600 600 VRRM V 600 600 DSEA 16-06BC DSEC 16-06BC 1 2 3 DSEA IFAV VRRM trr DSEA 16-06BC DSEC 16-06BC = 2x8 A = 600 V = 30 ns ISOPLUS220TM E153432 2 3 Type 1 DSEC G D S Isolated back surface Symbol IFRMS IFAVM IFSM EAS IAR.
z 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip 260 60 2500 11...65 / 2.5...15 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 z z Symbol IR c Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 8 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 60 0.25 1.65 3.0 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSEC16-06A |
IXYS |
High Performance Fast Recovery Diode | |
2 | DSEC16-06AC |
IXYS |
High Performance Fast Recovery Diode | |
3 | DSEC16-12A |
IXYS |
High Performance Fast Recovery Diode | |
4 | DSEC16-12AS |
IXYS |
High Performance Fast Recovery Diode | |
5 | DSEC120-12AK |
IXYS |
Epitaxial Diode | |
6 | DSEC240-04A |
IXYS |
High Performance Fast Recovery Diode | |
7 | DSEC240-06A |
IXYS |
High Performance Fast Recovery Diode | |
8 | DSEC29-02A |
IXYS Corporation |
HiPerFRED Epitaxial Diode with common cathode and soft recovery | |
9 | DSEC29-02AS |
IXYS Corporation |
HiPerFRED Epitaxial Diode with common cathode and soft recovery | |
10 | DSEC29-06AC |
INCHANGE |
Ultrafast Rectifier | |
11 | DSEC29-06AC |
IXYS |
High Performance Fast Recovery Diode | |
12 | DSEC30-02A |
IXYS Corporation |
HiPerFRED Epitaxial Diode |