■ Very low Vf ■ Extremely low switching losses ■ Low Irm values ■ Improved thermal behavior ■ High reliability circuit operation ■ Low voltage peaks for reduced protection circuits ■ Low noise switching ■ Terminals finish: 100% Pure Tin ■ This is a Pb − Free Device ■ Epoxy meets UL 94V-0 Applications: ■ Rectifiers in switch mode power supplies (SMPS) ■ Fr.
% duty cycle @TC=130°C, rectangular wave form 10 ms, Half Sine pulse, TJ=25°C TC= 25°C Diode Datasheet Max. 45 15 340 70 Units V A A W Electrical Characteristics (TA = 25°C unless otherwise specified) Symbol Characteristics Conditions VF1 Forward Voltage Drop1 VF2 IR1 Reverse Current1 IR2 CT Junction Capacitance @ 15A, Pulse, TJ = 25°C @ 15A, Pulse, TJ = 125°C @VR = rated VR, TJ = 25°C @VR = rated VR, TJ = 100°C @VR = 5V, TC = 25 °C fSIG = 1MHz Note 1: Pulse width < 300 μs, duty cycle < 2% Thermal-Mechanical Specifications Symbol TJ TO Tstg Characteristics Junction Temperat.
■ Very low Vf ■ Extremely low switching losses ■ Low Irm values ■ Improved thermal behavior ■ High reliability circuit .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSB15T |
Sanyo Semicon Device |
1.5A Power Rectifier | |
2 | DSB15TB |
Sanyo Semicon Device |
1.5A Power Rectifier | |
3 | DSB15TC |
Sanyo Semicon Device |
1.5A Power Rectifier | |
4 | DSB15TE |
Sanyo Semicon Device |
1.5A Power Rectifier | |
5 | DSB15TG |
Sanyo Semicon Device |
1.5A Power Rectifier | |
6 | DSB15TJ |
Sanyo Semicon Device |
1.5A Power Rectifier | |
7 | DSB15TL |
Sanyo Semicon Device |
1.5A Power Rectifier | |
8 | DSB10I45PM |
IXYS |
Schottky Diode | |
9 | DSB10P60PN |
IXYS |
Schottky Diode | |
10 | DSB1A100 |
Compensated Deuices Incorporated |
1 AMP SCHOTTKY BARRIER RECTIFIERS | |
11 | DSB1A100 |
Microsemi |
1 Amp Schottky Barrier Rectifiers | |
12 | DSB1A20 |
Compensated Deuices Incorporated |
1 AMP SCHOTTKY BARRIER RECTIFIERS |