DSA 1 Avalanche Diode Preliminary data VRRM = 1200-1800 V IF(RMS) = 7 A IFAVM = 2.3 A VRSM V 1300 1700 1900 V(BR)min V 1300 1750 1950 VRRM V 1200 1600 1800 Type DSA 1-12D DSA 1-16D DSA 1-18D AC A C Symbol IFRMS IFAVM PRSM IFSM I2t TVJ TVJM Tstg Weight Conditions TVJ = TVJM Tamb = 45°C; RthJA = 38 K/W; 180° sine Tamb = 45°C; RthJA = 80 K/W; 1.
• Plastic standard package
• Planar passivated chips
Applications
• Low power rectifiers
• Field supply for DC motors
• Power supplies
• High voltage rectifiers
Advantages
• Space and weight savings
• Simple PCB mounting
• Improved temperature & power cycling
• Reduced protection circuits
Symbol Conditions
IR VF VT0 rT RthJA
dS dA a
VR = VRRM
TVJ = TVJM
IF = 7 A
TVJ = 25°C
For power-loss calculations only TVJ = TVJM
Forced air cooling with 1.5 m/s, Tamb = 45°C Soldered on to PC board, Tamb = 45°C
Creepage distance on surface
Strike distance through air
Max. allowable acceleratio.
Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSA1-12D |
IXYS |
Avalanche Diode | |
2 | DSA1-18D |
IXYS |
Avalanche Diode | |
3 | DSA10 |
Sanyo Semicon Device |
1.0A Power Rectifier | |
4 | DSA1001 |
Microchip |
1.8V-3.3V Low-Power Precision CMOS Oscillators | |
5 | DSA1003 |
Microchip |
1.8V-3.3V Low-Power Precision CMOS Oscillators | |
6 | DSA1004 |
Microchip |
1.8V-3.3V Low-Power Precision CMOS Oscillators | |
7 | DSA10C150PB |
IXYS |
Schottky Diode | |
8 | DSA10C150UC |
IXYS |
Schottky Diode | |
9 | DSA10I100PM |
IXYS |
Schottky Diode | |
10 | DSA10IM100UC |
Littelfuse |
10A Schottky Rectifier Diode | |
11 | DSA1101 |
Microchip |
Low-Jitter Precision CMOS Oscillator | |
12 | DSA1103 |
Microchip |
Low-Jitter Precision LVDS Oscillator |