DS75-08B - IXYS

DS75-08B Rectifier Diode

Rectifier Diode Avalanche Diode DS 75 DSA 75 DSI 75 DSAI 75 VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A VRSM V V(BR)min x VRRM VV 900 - 800 1300 - 1200 1300 1700 1900 1300 1760 1950 1200 1600 1800 x Only for Avalanche Diodes Anode on stud DS 75-08B DS 75-12B DSA 75-12B DSA 75-16B DSA 75-18B Cathode on stud DSI 75-08B DSI 75-12B DSAI 75-12.

Features

G International standard package, JEDEC DO-203 AB (DO-5) G Planar glassivated chips Applications G High power rectifiers G Field supply for DC motors G Power supplies Advantages G Space and weight savings G Simple mounting G Improved temperature and power cycling G Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Symbol IR VF VT0 rT RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM IF = 150 A; TVJ = 25 C For power-loss calculations only TVJ = TVJM DC current DC current Creepage distance on surface Strike distance through air Max. allowable acceleration Data according to.