DS521-30EAA02 - JCET

DS521-30EAA02 Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB0.6x0.3-2L-B Plastic-Encapsulate Diodes DS521-30EAA02 SCHOTTKY BARRIER DIODE DFNWB0.6x0.3-2L-B FEATURE  Small surface mounting type  Low reverse current and low forward voltage  High reliability APPLICATION  High speed switching for detection  For portable equipment:(i.e. Mobile phone,MP3, MD,CD.

Features

se breakdown voltage V(BR) IR=50μA Reverse current VR=10V IR VR=30V Forward voltage IF=10mA VF IF=100mA Min Typ Max 30 10 50 0.38 0.60 Unit V μA μA V V www.cj-elec.com 1 B,Apr,2016 7SLFDO&KDUDFWHULVWLFV 200 100 Pulsed Forward Characteristics oC =100 T a oC FORWARD CURRENT I (mA) F 10 1 =25 T a 0.1 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE V (V) F REVERSE CURRENT I (uA) R 1000 Pulsed 100 Reverse Characteristics T =100 oC a 10 1 0.1 T =25 oC a 0.01 1E-3 0 5 10 15 20 25 REVERSE VOLTAGE V (V) R 30 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATI.