DS1270W - Maxim Integrated

DS1270W 3.3V 16Mb Nonvolatile SRAM

A0–A20 - Address Inputs DQ0–DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+3.3V) - Ground NC - No Connect DESCRIPTION The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and .

Features

 Five years minimum data retention in the absence of external power
 Data is automatically protected during power loss
 Unlimited write cycles
 Low-power CMOS operation
 Read and write access times of 100ns
 Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
 Optional industrial (IND) temperature range of -40°C to +85°C PIN ASSIGNMENT NC A20 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 VCC 35 A19 34 NC 33 A15 32 A17 31 WE 30 A13 29 A8 28 A9 27 A11 26 OE 25 A10 24 .