DMTH8008SFGQ - DIODES

DMTH8008SFGQ 80V N-CHANNEL MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Conv.

Features

BVDSS 80V RDS(ON) Max 7mΩ @ VGS = 10V 10.5mΩ @ VGS = 6V ID Max TC = +25°C 68A 56A Description This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
 Rated to +175°C
  – Ideal for High Ambient Temperature Environments
 Low RDS(ON)
  – Ensures On-State Losses are Minimized
 Excellent Qgd × RDS(ON) Product (FOM)
 Advanced Technology for DC-DC Converters
 Small Form Factor Thermally Efficient Package Enables Higher Density End Products
 Occupies Just 33% of the Board Area Occupied by S.