·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Opera.
·Drain Current
–ID= 100A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 6.0mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
100
A
IDM
Drain Current-Single Pluse
160
A
PD
Total Dissipation @TC=25℃
125
W
TJ
.
and Applications This new generation MOSFET features low on-resistance and fast switching, making it ideal for high effi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMTH6005LFG |
DIODES |
60V N-CHANNEL MOSFET | |
2 | DMTH6005LK3 |
Diodes |
60V N-Channel MOSFET | |
3 | DMTH6005LK3Q |
Diodes |
60V N-CHANNEL MOSFET | |
4 | DMTH6005LPS |
Diodes |
60V N-Channel MOSFET | |
5 | DMTH6005LPSQ |
Diodes |
60V N-Channel MOSFET | |
6 | DMTH6002LPS |
Diodes |
60V N-Channel MOSFET | |
7 | DMTH6002LPSW |
DIODES |
60V N-CHANNEL MOSFET | |
8 | DMTH6002LPSWQ |
DIODES |
60V N-CHANNEL MOSFET | |
9 | DMTH6004LPS |
Diodes |
N-Channel MOSFET | |
10 | DMTH6004SCT |
INCHANGE |
N-Channel MOSFET | |
11 | DMTH6004SCT |
Diodes |
N-Channel MOSFET | |
12 | DMTH6004SCTB |
INCHANGE |
N-Channel MOSFET |