This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Rated to +175C – Ideal for High Ambient Temperature Environments Thermally Efficient Package-Cooler Running Applications High Conversion .
BVDSS 100V
RDS(ON) Max 8.6mΩ @ VGS = 10V
ID TC = +25°C
98.4A
Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Rated to +175C
– Ideal for High Ambient Temperature Environments
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON)
– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile
– Ideal for Thin Applications
Lead-F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMTH10H010LCT |
INCHANGE |
N-Channel MOSFET | |
2 | DMTH10H010LCT |
Diodes |
N-CHANNEL MOSFET | |
3 | DMTH10H010SCT |
INCHANGE |
N-Channel MOSFET | |
4 | DMTH10H010SCT |
DIODES |
N-CHANNEL MOSFET | |
5 | DMTH10H010SPS |
DIODES |
100V N-CHANNEL MOSFET | |
6 | DMTH10H015LK3 |
Diodes |
N-CHANNEL MOSFET | |
7 | DMTH10H015LPS |
Diodes |
100V N-CHANNEL MOSFET | |
8 | DMTH10H015SK3 |
DIODES |
100V N-CHANNEL MOSFET | |
9 | DMTH10H015SK3Q |
DIODES |
100V N-CHANNEL MOSFET | |
10 | DMTH10H015SPS |
DIODES |
100V N-CHANNEL MOSFET | |
11 | DMTH10H015SPSQ |
DIODES |
100V N-CHANNEL MOSFET | |
12 | DMTH10H017LPD |
DIODES |
100V Dual N-Channel MOSFET |