DMT3009UDT - DIODES

DMT3009UDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Ultra Low Gate Threshold Voltage  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Fr.

Features

 Ultra Low Gate Threshold Voltage
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 ESD Protected Gate
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications
 General Purpose Interfacing Switch
 Power Management Functions Mech.