This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low RDS(ON) – Ensures On State Losses are Minimized • Excellent Qgd x RDS (ON) Product (FOM) • Advanced Technology for DC/DC Converters • Small Form .
• Low RDS(ON)
– Ensures On State Losses are Minimized
• Excellent Qgd x RDS (ON) Product (FOM)
• Advanced Technology for DC/DC Converters
• Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
• 100% Unclamped Inductive Switching (UIS) Test in Production
Ensures More Reliable and Robust End Application
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen- and Antimony-Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control
(i.e. parts qual.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMT10H009LCG |
DIODES |
100V N-Channel MOSFET | |
2 | DMT10H009LK3 |
DIODES |
100V N-Channel MOSFET | |
3 | DMT10H009LPS |
DIODES |
100V N-CHANNEL MOSFET | |
4 | DMT10H009LSS |
DIODES |
100V N-CHANNEL MOSFET | |
5 | DMT10H009SCG |
DIODES |
100V N-CHANNEL MOSFET | |
6 | DMT10H009SK3 |
DIODES |
100V N-CHANNEL MOSFET | |
7 | DMT10H009SPS |
DIODES |
100V N-CHANNEL MOSFET | |
8 | DMT10H009SSS |
DIODES |
100V N-CHANNEL MOSFET | |
9 | DMT10H003SPSW |
DIODES |
100V N-CHANNEL MOSFET | |
10 | DMT10H010LCT |
INCHANGE |
N-Channel MOSFET | |
11 | DMT10H010LCT |
Diodes |
N-CHANNEL MOSFET | |
12 | DMT10H010LK3 |
Diodes |
100V N-CHANNEL MOSFET |