DMN95H2D2HCTI - INCHANGE

DMN95H2D2HCTI N-Channel MOSFET

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operatin.

Features

·Drain Current
  –ID= 6A@ TC=25℃
·Drain Source Voltage- : VDSS= 950V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 2.2Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 40 W TJ Max..