·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 40 V ±20 V ID Drain Current-Continuous 13.8 A IDM Drain Current-Single Pluse 50 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operatin.
·Drain Current
–ID= 13.8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 40V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 30mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
40
V
±20
V
ID
Drain Current-Continuous
13.8
A
IDM
Drain Current-Single Pluse
50
A
PD
Total Dissipation @TC=25℃
40
W
TJ
Ma.
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maint.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMN4008LFG |
Diodes |
N-Channel MOSFET | |
2 | DMN4009LK3 |
Diodes |
New Generation MOSFET | |
3 | DMN4010LFG |
Diodes |
N-Channel MOSFET | |
4 | DMN4010LK3 |
INCHANGE |
N-Channel MOSFET | |
5 | DMN4010LK3 |
Diodes |
N-Channel MOSFET | |
6 | DMN4015LK3 |
Diodes |
New Generation MOSFET | |
7 | DMN4020LFDE |
Diodes |
40V N-Channel MOSFET | |
8 | DMN4026SK3 |
INCHANGE |
N-Channel MOSFET | |
9 | DMN4026SK3 |
Diodes |
N-Channel MOSFET | |
10 | DMN4026SSD |
Diodes |
Dual N-Channel MOSFET | |
11 | DMN4027SSD |
Diodes |
Dual N-Channel MOSFET | |
12 | DMN4027SSS |
Diodes |
40V N-Channel MOSFET |