This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features CSP with Footprint 3.05mm × 1.77mm Height = 0.11mm for Low Profile ESD Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 &.
CSP with Footprint 3.05mm × 1.77mm
Height = 0.11mm for Low Profile
ESD Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Applications
Battery Management
Load Switch
Battery Protection
Mechanical Data
Case: X4-DSN3118-6
Te.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMN100 |
Diodes Incorporated |
N-Channel MOSFET | |
2 | DMN1004UFV |
DIODES |
12V N-CHANNEL MOSFET | |
3 | DMN1008UFDF |
DIODES |
12V N-CHANNEL MOSFET | |
4 | DMN1008UFDFQ |
DIODES |
12V N-CHANNEL MOSFET | |
5 | DMN1016UCB6 |
Diodes |
N-CHANNEL MOSFET | |
6 | DMN1017UCP3 |
DIODES |
N-CHANNEL MOSFET | |
7 | DMN1019UFDE |
Diodes |
N-Channel MOSFET | |
8 | DMN1019USN |
Diodes |
12V N-CHANNEL MOSFET | |
9 | DMN1019USNQ |
DIODES |
12V N-CHANNEL MOSFET | |
10 | DMN1019UVT |
Diodes |
12V N-CHANNEL MOSFET | |
11 | DMN1025UFDB |
Diodes |
DUAL N-CHANNEL MOSFET | |
12 | DMN1029UFDB |
Diodes |
N-CHANNEL ENHANCEMENT MODE MOSFET |