The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close im.
Low 1/f noise
Low intermodulation distortion
Hermetically sealed packages
Statistical process control wafer fabrication
Packages rated MSL1, 260 C per JEDEC J-STD-020)
Description
The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages ar.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMJ2839-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
2 | DMJ2832-000 |
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Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
3 | DMJ2832-222 |
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Silicon Beam-Lead Schottky Mixer Diodes | |
4 | DMJ2832-232 |
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Silicon Beam-Lead Schottky Mixer Diodes | |
5 | DMJ2832-252 |
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Silicon Beam-Lead Schottky Mixer Diodes | |
6 | DMJ2833-000 |
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Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
7 | DMJ2833-222 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
8 | DMJ2833-232 |
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Silicon Beam-Lead Schottky Mixer Diodes | |
9 | DMJ2836-000 |
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Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
10 | DMJ2836-223 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
11 | DMJ2823-000 |
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Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
12 | DMJ2823-220 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes |