Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form .
Low 1/f noise
Low intermodulation distortion
Statistical Process Control wafer fabrication
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Description
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.
Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMJ2093-222 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
2 | DMJ2093-252 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
3 | DMJ2092-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
4 | DMJ2092-222 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
5 | DMJ2092-252 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
6 | DMJ2088-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
7 | DMJ2088-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
8 | DMJ2088-255 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
9 | DMJ2208-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
10 | DMJ2208-223 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
11 | DMJ2208-253 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
12 | DMJ2209-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices |