·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage 650 V Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous 7.7 A Drain Current-Single Pluse 10 A Total Dissipation @TC=25℃ 125 W Max. Opera.
·Drain Current
–ID= 7.7A@ TC=25℃
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.4Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID IDM PD TJ Tstg
Drain-Source Voltage
650
V
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous
7.7
A
Drain Current-Single Pluse
10
A
Total Dissipation @TC=25℃
125
W
.
and Applications This new generation MOSFET features low on-resistance and fast switching, making it ideal for high effi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMG7N65SCTI |
Diodes |
N-CHANNEL MOSFET | |
2 | DMG7N65SCTI |
INCHANGE |
N-Channel MOSFET | |
3 | DMG7N65SJ3 |
INCHANGE |
N-Channel MOSFET | |
4 | DMG7N65SJ3 |
Diodes |
N-CHANNEL MOSFET | |
5 | DMG7401SFG |
Diodes |
P-Channel MOSFET | |
6 | DMG7401SFGQ |
Diodes |
P-Channel MOSFET | |
7 | DMG7408SFG |
Diodes |
30V N-Channel MOSFET | |
8 | DMG7410SFG |
Diodes |
N-Channel MOSFET | |
9 | DMG7430LFG |
Diodes |
N-Channel MOSFET | |
10 | DMG7430LFGQ |
DIODES |
N-CHANNEL MOSFET | |
11 | DMG7702SFG |
Diodes |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
12 | DMG |
Rubycon |
ELECTRIC DOUBLE LAYER CAPACITORS |