DMG4712SSS - Diodes

DMG4712SSS N-Channel MOSFET

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMG4712SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features  High Density UMOS with Schottky Barrier Diode  Low Leakage Current at High Temperature  High Conversion Efficiency  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Utilizes Diodes Incorporated’s Monolithic DIOF.

Features

 High Density UMOS with Schottky Barrier Diode
 Low Leakage Current at High Temperature
 High Conversion Efficiency
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency
 UIS Tested, RG Tested
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
 Case: SO-8
 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94.