Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form .
Low 1/f noise
Low intermodulation distortion
Statistical Process Control wafer fabrication
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Description
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.
Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMF2076-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
2 | DMF2076-255 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
3 | DMF2077-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
4 | DMF2077-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
5 | DMF2077-255 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
6 | DMF2078-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
7 | DMF2078-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
8 | DMF2078-235 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
9 | DMF2078-255 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
10 | DMF2011-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
11 | DMF2011-224 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
12 | DMF2011-254 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes |