The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close im.
Low 1/f noise
Low intermodulation distortion
Hermetically sealed packages
Statistical process control wafer fabrication
Packages rated MSL1, 260 C per JEDEC J-STD-020)
Description
The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages ar.
No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | DME2031-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
2 | DME2031-235 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
3 | DME2031-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
4 | DME2029-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
5 | DME2029-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
6 | DME2029-255 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
7 | DME2050 |
Alpha |
Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes | |
8 | DME2050-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
9 | DME2050-222 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
10 | DME2050-252 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
11 | DME2127-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
12 | DME2127-220 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes |