DL-100-7-KER SMD Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity Parameters: active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise li.
0.2 SMD - Kontaktrückseite SMD - back contact
1.6
www.pacific-sensor.com
1.5
25.0 ± 0.2
+/- 1% typ. 30 V
Chip: DL-100-7
www.DataSheet4U.com
Spectral responsivity (A/W)
series-7
0,7
Photo Sensitivity [A/W]
0,6 0,5 0,4 0,3 0,2 0,1 0 200 300 400 500 600 700 800 900 1000 1100
Wavelength [nm]
Handling precautions
Soldering temperature 260°C for max. 10 s. The device must be protected against solder flux vapour! ESD
– protection only small danger for the device. Standard precautionary measures are sufficient. Avoid touching the window with fingers! Careful cleaning with Ethyl alcohol p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DL-100-7-KER |
Pacific Silicon Sensor |
Photo Diodes | |
2 | DL-1080 |
AEMC |
(DL-1080 / DL-1081) DATA LOGGER USER MANUAL | |
3 | DL-1081 |
AEMC |
(DL-1080 / DL-1081) DATA LOGGER USER MANUAL | |
4 | DL-3038-011 |
Sanyo Semicon Device |
Index Guided AlGalnP Laser Diode | |
5 | DL-3038-023 |
Sanyo Semicon Device |
AlGalnP Laser Diode | |
6 | DL-3038-033 |
Sanyo Semicon Device |
Index Guided AlGalnP Laser Diode | |
7 | DL-3038-041 |
Sanyo Semicon Device |
Index Guided AlGalnP Laser Diode | |
8 | DL-3039-011 |
Sanyo Semicon Device |
Index Guided AlGalnP Laser Diode | |
9 | DL-3107-165 |
Sanyo Semicon Device |
RED LASER DIODE | |
10 | DL-3144-007S |
Sanyo Semicon Device |
INFRARED LASER DIODE | |
11 | DL-3146-151 |
Sanyo Semicon Device |
BLUE-VIOLET LASER DIODE | |
12 | DL-3147-021 |
Sanyo Semicon Device |
Index Guided AlGalnP Laser Diode |