DKI06186 - SANKEN

DKI06186 N Channel Trench Power MOSFET

60 V, 31 A, 11.8 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI06186 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 31 A  RDS(ON) -------- 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)  Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A)  Low Total Gate Charge  High Spee.

Features

 V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
 ID ---------------------------------------------------------- 31 A
 RDS(ON) -------- 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)
 Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A)
 Low Total Gate Charge
 High Speed Switching
 Low On-Resistance
 Capable of 4.5 V Gate Drive
 100 % UIL Tested
 RoHS Compliant Package TO-252 (4) D (1) (2) (3) GDS (3) (2) (1) SDG Applications
 DC-DC converters
 Synchronous Rectification
 Power Supplies Equivalent circuit D(2)(4) G(1) S(3) Not to scale Absolute Maximum Ratings
 Un.