DIM100WHS12-A000 - Dynex Semiconductor

DIM100WHS12-A000 IGBT Power Module

www.DataSheet4U.com DIM100WHS12-A000 DIM100WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5735-1.0 DS5735-2.0 May 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 100A 200A *(Measured at the power busbars.

Features

I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)
* (max) IC (max) IC(PK) 1200V 2.2V 100A 200A
*(Measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters Motor Controllers 7(E2) 6(G2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM100WHS12-A000 is a half bridge switch 1200V, n channel enhancement mode, insulated gate bipolar transistor D.