DGSK32-018CS - IXYS Corporation

DGSK32-018CS Gallium Arsenide Schottky Rectifier

DGS 15-018CS DGSK 32-018CS www.DataSheet4U.com Gallium Arsenide Schottky Rectifier Second generation VRRM = 180 V IDC = 24 A CJunction = 21 pF Type DGS 15-018CS Marking on product 15A180AS Single Circuit A C Package TO-252 AA A A TAB DGSK 32-018CS DGSK 32-018CS Common cathode A C A TO-263 AB A A TAB A = Anode, TAB = Cathode Diode Symbol VRRM/RS.

Features

Conditions Maximum Ratings 180 TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C Conditions IF = 7.5 A; IF = 7.5 A; VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C 24 15 80 34 V A A A W Characteristic Values min. typ. max. 1.25 1.0 0.25 1.1 23 21 1.5 V V 0.25 mA mA A ns pF 4.4 K/W GaAs Schottky Diode with Enhanced Barrier Height:
• lowest operating forward voltage drop due to additional injection of minority carriers
• high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current .