This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-126 pkg is well suited for charger SMPS and small power inverter application. TO-126 1 .
High ruggedness RDS(on) (Max 11.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 1.1A 3. Source Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-126 pkg is well suited for charger SMPS and small power inverter application. TO-126 1 2 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DFR10A20CT |
Thinki Semiconductor |
10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers | |
2 | DFR10A40CT |
Thinki Semiconductor |
10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers | |
3 | DFR10A60CT |
Thinki Semiconductor |
10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers | |
4 | DFR0.3A |
LGE |
Surface Mount Fast Recovery Rectifiers | |
5 | DFR0.3A |
MDD |
SUFACE MOUNT FAST RECOVERY RECTIFIER | |
6 | DFR0.3B |
LGE |
Surface Mount Fast Recovery Rectifiers | |
7 | DFR0.3B |
MDD |
SUFACE MOUNT FAST RECOVERY RECTIFIER | |
8 | DFR0.3D |
LGE |
Surface Mount Fast Recovery Rectifiers | |
9 | DFR0.3D |
MDD |
SUFACE MOUNT FAST RECOVERY RECTIFIER | |
10 | DFR0.3G |
LGE |
Surface Mount Fast Recovery Rectifiers | |
11 | DFR0.3G |
MDD |
SUFACE MOUNT FAST RECOVERY RECTIFIER | |
12 | DFR0.3J |
LGE |
Surface Mount Fast Recovery Rectifiers |