* Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-126 .304(7.72) .285(7.52) .105(2..
+150 Unit V .279(7.09) .275(6.99) 1 2 3 3 Typ .052(1.32) .048(1.22) 3 Typ o o On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature .620(15.75) .600(15.25) A A A W W o o .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 Typ (0.55) 3 Typ o 3 Typ o C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic Peak Repetitive Forward or Reverse O.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DCR106-3 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
2 | DCR106-6 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
3 | DCR106-8 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
4 | DCR100-3 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
5 | DCR100-4 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
6 | DCR100-6 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
7 | DCR100-8 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
8 | DCR1002SF |
Dynex Semiconductor |
Phase Control Thyristor | |
9 | DCR1003SF |
Dynex Semiconductor |
Phase Control Thyristor | |
10 | DCR1006SF |
Dynex Semiconductor |
Phase Control Thyristor | |
11 | DCR1008SF |
Dynex Semiconductor |
Phase Control Thyristor | |
12 | DCR1010G14 |
DYNEX |
Phase Control Thyristor |