D882M-G - Comchip

D882M-G General Purpose Transistors

General Purpose Transistors D882M-G RoHS Device Features - Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage. Diagram - 1. BASE - 2. COLLECTOR - 3. EMITTER 2 C 1 B E 3 Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-base voltage Collector-emitter voltag.

Features

- Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage. Diagram - 1. BASE - 2. COLLECTOR - 3. EMITTER 2 C 1 B E 3 Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector power dissipation Junction temperature range VCBO VCEO VEBO IC PC TJ 40 V 30 V 6V 3A 1.25 W 150 °C Storage temperature range TSTG -55 to +150 °C TO-252-2L 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.202(5.13) 0.409(10.40) 0.386( 9.80) .