D70F2T1 - GE

D70F2T1 NPN POWER TRANSISTORS

SURFACE-MOUNT NPN POWER TRANSISTORS D70F2T1 50 VOLTS 2 AMP, 500 mWATTS Designed for power amplifier applications, power switching appl ications. Features: • Low saturation voltage : VCE(sat) = 0.5V (Max.) (IC = 1A) • High speed switching time: tstg = 1.0J,Ls (Typ.) • PD=1 ~ 2W (Mounted on ceramic substrate) • Small flat package • Complementary to D71 F2T1 .

Features

• Low saturation voltage : VCE(sat) = 0.5V (Max.) (IC = 1A)
• High speed switching time: tstg = 1.0J,Ls (Typ.)
• PD=1 ~ 2W (Mounted on ceramic substrate)
• Small flat package
• Complementary to D71 F2T1
• See page 840 for mounting and handling considerations. WM1if.MARKING SYSTEM TVPENAME hFE DESIGNATION hFE DESIGNATION 1) 711-240 2)70
·140 3)120
·240 NPN COLLECTOR CASE STYLE SOT-89 EMITTER DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .181 (4.6 MAX.) .016
· .002 +.003 (0.4 -O.OS) ('O.OB) .OS9 ± .004 -oi+---+-~- .OS9 ± .004 (l.S±O.l) (l.S±O.l) maximum ratings(TA = 25° C) (unless otherwise spe.