These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) (TYP)= 2.1Ω ID = 4A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤2.5Ω) ● Low Gate.
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤2.5Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:4pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
TO-220C TO-220F TO-262
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
4N60/I4N60/E4N60 /B4N60/D4N60
Maximum Drian-Sourc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D4N |
Omron |
Safety Limit Switch | |
2 | D4N-412G |
Omron |
Safety Limit Switch | |
3 | D4N-4132 |
Omron |
Safety Limit Switch | |
4 | D4N-4220 |
Omron |
Safety Limit Switch | |
5 | D4N-4231 |
Omron |
Safety Limit Switch | |
6 | D4N-6120 |
Omron |
Safety Limit Switch | |
7 | D4N-6122 |
Omron |
Safety Limit Switch | |
8 | D4N-6125 |
Omron |
Safety Limit Switch | |
9 | D4N06L |
Intersil |
RFD4N06L | |
10 | D4NK50Z |
STMicroelectronics |
N-Channel MOSFET | |
11 | D4NK60Z |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
12 | D40 |
USHA |
Rectifier Diode |