Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C10 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MH.
l Resistance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45C10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -100mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A ;IB= -100mA -1.3 V ICES Collector Cutoff Current VCE= -90V, VBE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -0.2A ; VCE= -1V 25 hFE-2 DC Curren.
D45C10 - GE
PNP POWER TRANSISTORS COMPLEMENTARY TO THE D44C SERIES D45C Series -30 - -80 VOLTS -4 AMP, 30 WATTS The General Electr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | D45C1 |
Mospec Semiconductor |
Power Transistors |
|
| 2 | D45C1 |
INCHANGE |
PNP Transistor |
|
| 3 | D45C1 |
GE |
PNP POWER TRANSISTORS |
|
| 4 | D45C11 |
Fairchild Semiconductor |
PNP Current Driver Transistor |
|
| 5 | D45C11 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 6 | D45C11 |
GE |
PNP POWER TRANSISTORS |
|
| 7 | D45C12 |
Mospec Semiconductor |
Power Transistors |
|
| 8 | D45C12 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | D45C12 |
ON Semiconductor |
Complementary Silicon Power Transistor |
|
| 10 | D45C12 |
GE |
PNP POWER TRANSISTORS |
|
| 11 | D45C |
Motorola Inc |
4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 12 | D45C |
SavantIC |
SILICON POWER TRANSISTOR |
|