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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 D3SBA10 ~ D3SBA100 PRV : 100 ~ 1000 Volts Io : 4.0 Amperes SILICON BRIDGE RECTIFIER RBV4 0.150 (3.8) C3 0.996 (25.3) 0.134 (3.4) 0.189 (4.8) 0.972 (24.7) 0.173 (4.4) 0.383(9.7) 0.367(9.3) 0.709 (18) 0.669 (17) 0.134(3.4) 0.122(3.1) 0.603(15.3) 0.579(14.7) FEATURES : * High current .
:
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
+~ ~
0.130(3.7) 0.146(3.3)
0.303 (7.7) 0.287 (7.3)
0.043 (1.1) 0.035 (0.9)
0.032 (0.8) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | D3SBA10 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIER |
|
| 2 | D3SBA20 |
Shindengen Electric Mfg.Co.Ltd |
General Purpose Rectifiers SIL Bridges |
|
| 3 | D3SBA20 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIER |
|
| 4 | D3SBA40 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIER |
|
| 5 | D3SBA60 |
EIC discrete Semiconductors |
(D3SBAx0) SILICON BRIDGE RECTIFIER |
|
| 6 | D3SBA60 |
Shindengen Electric |
Bridge Diodes |
|
| 7 | D3SBA80 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIER |
|
| 8 | D3SB10 |
Shanghai Sunrise Electronics |
SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER |
|
| 9 | D3SB10 |
EIC |
SILICON BRIDGE RECTIFIERS |
|
| 10 | D3SB10 |
LRC |
High Current Glass Passivated Molding Single-Phase Bridge Rectifier |
|
| 11 | D3SB10 |
SeCoS |
4.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier |
|
| 12 | D3SB100 |
FAGOR |
Glass Passivated Single Phase In Line Bridge Rectifier |
|