D2256UK - Seme LAB

D2256UK METAL GATE RF SILICON FET

TetraFET D2256UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 7 6 F 5 O J K L 1 2 R 3 4 C A Q N M I P H G DBC4 Package PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 6 Gate 2 PIN 3 Drain 2 PIN 7 Gate 1 PIN 4 Source (Common) PIN 8 Source (Common) DIM mm Tol. Inches Tol. A 6.47 0.08 .255 .003 B .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 70W BVDSS Drain
  – Source Breakdown Voltage
* 40V BVGSS Gate
  – Source Breakdown Voltage
* ±20V ID(sat) Drain Current
* 8A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C
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