D2140 - Inchange Semiconductor

D2140 Power Transistor

·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421 APPLICATIONS ·Designed for high power amplifications. ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter.

Features

VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V μA μA Collector Cutoff Current VCB= 140V; IE= 0 50 IEBO hFE-1 Emitter Cutoff Current VEB= 3V; IC= 0 IC= 20mA; VCE= 5V 20 50 DC Current Gain hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain COB Collector Output Capacitance fT Current-Gain—Bandwidth Product ‹ hFE-2Classifications Q 60-120 S 80-160 w P ww s c s .i IC= 5A; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 0.5A; VCE= 5 V; f= 1MHz n c . i m e 60 20 200 110 pF 20 MHz.