TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Zener diode included between collector and base. • Unclamped .
ture, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SD2131 Characteristic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D213 |
ETC |
Single & Dual Output Miniature 2W SIP DC/DC Converters | |
2 | D2132 |
Rohm |
NPN SIlicon Transistor | |
3 | D2135 |
Panasonic |
Silicon NPN Power Transistor | |
4 | D2136 |
Panasonic Semiconductor |
2SD2136 | |
5 | D2137 |
Panasonic Semiconductor |
2SD2137 | |
6 | D2139 |
Panasonic Semiconductor |
2SD2139 | |
7 | D2100 |
Sanyo Semicon Device |
2SD2100 | |
8 | D2101 |
Hitachi Semiconductor |
2SD2101 | |
9 | D2101S |
RCA |
Thyristors / Rectifiers | |
10 | D2102 |
Hitachi Semiconductor |
2SD2102 | |
11 | D2103 |
Hitachi Semiconductor |
2SD2103 | |
12 | D2103S |
RCA |
Thyristors / Rectifiers |