www.dat·aWshiethet4TuO.co-2m20F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings .
BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A VBE Base-emitter on voltage IC=3A;VCE=5V ICBO Collector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V COB Collector output capacitance f=1MHz;VCB=10V MIN TYP. MAX UNIT 80 V 5V 0.45 1.5 V 1.0 1.5 V 30 µA 100 µA 40 240 15 50 8.0 MHz 90 pF hFE-1 Classificat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2060C |
nELL |
Standard Recovery Diode | |
2 | D2060D |
nELL |
Standard Recovery Diode | |
3 | D2061 |
Jiangsu Changjiang Electronics |
NPN Transistor | |
4 | D2061 |
SeCoS |
PNP Transistor | |
5 | D2061 |
SavantIC |
Silicon NPN Power Transistors | |
6 | D2065C5 |
Infineon |
SiC Schottky Barrier diodes | |
7 | D20 |
STMicroelectronics |
Memory Micromodules | |
8 | D200 |
uPD |
SIP DC/DC Converters | |
9 | D2001UK |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | D2002 |
Shaoxing Silicore Technology |
Stereo Headphone Amplifier | |
11 | D2002UK |
Seme LAB |
METAL GATE RF SILICON FET | |
12 | D2003UK |
Seme LAB |
METAL GATE RF SILICON FET |