TetraFET D2032UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B (2 pls) E A C2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 HJ I DK SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 I 24.76 J 1.52 K 0.81R M 0.13 N 2.16 Tol. Inch.
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
35W
BVDSS
Drain
– Source Breakdown Voltage
*
65V
BVGSS
Gate
– Source Breakdown Voltage
*
±20V
ID(sat)
Drain Current
*
1A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2030 |
Shaoxing Silicore Technology |
14W Hi-Fi Audio Amplifier | |
2 | D2030 |
Renesas Technology |
2SD2030 | |
3 | D2030UK |
Seme LAB |
METAL GATE RF SILICON FET | |
4 | D2031UK |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | D2033 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
6 | D203B |
fujielectric |
D203B | |
7 | D203S |
SilvanChip |
Pyroelectric Infrared Sensor | |
8 | D20 |
STMicroelectronics |
Memory Micromodules | |
9 | D200 |
uPD |
SIP DC/DC Converters | |
10 | D2001UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D2002 |
Shaoxing Silicore Technology |
Stereo Headphone Amplifier | |
12 | D2002UK |
Seme LAB |
METAL GATE RF SILICON FET |