D1760 - ROHM Electronics

D1760 2SD1760

Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 0.9 1.5 2.5 9..

Features

1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243.
Structure Epitaxial planar type NPN silicon transistor
Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 0.9 1.5 2.5 9.5±0.5 +0.3 −0.1 0.9 5.5 1.0 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 0.55±0.1 1.0±0.2 (1) Base (2) Collector (3) Emitter 0.65Max. 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 14.5±0.5 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base
Absolute maximum rat.