D1222UK - Seme LAB

D1222UK METAL GATE RF SILICON FET

TetraFET D1222UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B (2 pls) E A C2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 HJ I DK SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 I 24.76 J 1.52 K 0.81R M 0.13 N 2.16 Tol. Inch.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 290W BVDSS Drain
  – Source Breakdown Voltage
* 40V BVGSS Gate
  – Source Breakdown Voltage
* ±20V ID(sat) Drain Current
* 30A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C
* Per Side Semelab Plc reserves the right to change test conditions, parameter l.