D1140 - Toshiba Semiconductor

D1140 2SD1140

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximu.

Features

uration voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ. Max Unit ― ― 10 µA ― ― 10 µA 30 ― ― V 4000 ― ― ― 1.5 V ― 2.2 V Turn-on time ton 20 µs Input Output ― 0.2 ― IB1 IB2 15 Ω Switching time Storage time Fall time Marking tstg VCC = 15 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 0.6 ― µs ― 0.3 ― D1140 Product No. Lot No. Explanation of Lot No. Month of manufacture (January to December.