D1137 - Hitachi Semiconductor

D1137 2SD1137

2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junct.

Features

1.0 V Test conditions IC = 10 mA, RBE = ∞ IE = 1 mA, IC = 0 VCE = 80 V, RBE = ∞ VEB = 3.5 V, IC = 0 VCE = 4 V IC = 0.5 A
*1 IC = 50 mA IC = 1 A, IB = 0.1 A Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 10 (10 V, 4 A) 3 1.0 DC Operation TC = 25°C (40 V, 1 A) 0.3 0.1 (100 V, 50 mA) 0.03 0.01 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) 2 Collector current IC (A) Typical Output Characteristecs 1.0 10 TC = 25°C 8 0.8 6 0.6 4 0.4 2 mA 0..